- Part Number
- IPD60R2K0C6BTMA1
- Manufacturer
- Infineon Technologies
- Description
- MOSFET N-CH 600V 2.4A TO252-3
- Package
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- Current - Continuous Drain (Id) @ 25°C
- 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs
- 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 140pF @ 100V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 22.3W (Tc)
- Rds On (Max) @ Id, Vgs
- 2 Ohm @ 760mA, 10V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO252-3
- Package / Case