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IPD60R360P7ATMA1 original picture
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*Images are for reference only.

IPD60R360P7ATMA1

MOSFET LOW POWER_NEW

Manufacturer:
Infineon Technologies
Package:
TO-252-3
Packing:
Reel
Datasheet:
IPD60R360P7ATMA1
Delivery services:
Payment method:
In stock:
3431
Order quantity:

Specifications

Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
9 A
Rds On - Drain-Source Resistance:
305 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
13 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
41 W
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Infineon Technologies
Configuration:
Single
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
7 ns
Series:
CoolMOS P7
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
42 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
IPD60R360P7 SP001606048
Unit Weight:
0.011640 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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