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IPL60R299CP

MOSFET N-Ch 650V 11.1A ThinPAK-4 CoolMOS CP

Manufacturer:
Infineon Technologies
Package:
VSON-4
Packing:
Reel
Datasheet:
IPL60R299CP
Delivery services:
Payment method:
In stock:
3317
Order quantity:

Specifications

Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSON-4
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
11.1 A
Rds On - Drain-Source Resistance:
299 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Qg - Gate Charge:
22 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
96 W
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Packaging:
Cut Tape
Brand:
Infineon Technologies
Configuration:
Single
Fall Time:
5 ns
Height:
1.1 mm
Length:
8 mm
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
5 ns
Series:
CoolMOS CE
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
10 ns
Width:
8 mm
Part # Aliases:
IPL6R299CPXT SP000841896 IPL60R299CPAUMA1
Unit Weight:
0.006619 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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