- Part Number
- IPP06CN10NGXKSA1
- Manufacturer
- Infineon Technologies
- Description
- MOSFET N-CH 100V 100A TO-220
- Package
- TO-220-3
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 4V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs
- 139nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 9200pF @ 50V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 214W (Tc)
- Rds On (Max) @ Id, Vgs
- 6.5 mOhm @ 100A, 10V
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- PG-TO-220-3
- Package / Case
