- Part Number
- IPS118N10N G
- Manufacturer
- Infineon Technologies
- Description
- MOSFET N-CH 100V 75A TO251-3
- Package
- TO-251-3 Stub Leads, IPak
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs
- 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 4320pF @ 50V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 125W (Tc)
- Rds On (Max) @ Id, Vgs
- 11.8 mOhm @ 75A, 10V
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- PG-TO251-3
- Package / Case