- Part Number
- IPT60R028G7XTMA1
- Manufacturer
- Infineon Technologies
- Description
- MOSFET N-CH 650V 75A HSOF-8
- Package
- Tape & Reel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 4V @ 1.44mA
- Gate Charge (Qg) (Max) @ Vgs
- 123nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 4820pF @ 400V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 391W (Tc)
- Rds On (Max) @ Id, Vgs
- 28 mOhm @ 28.8A, 10V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-HSOF-8
- Package / Case
- 8-PowerSFN
