- Manufacturer:
- Infineon
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- Through Hole
- Package / Case:
- TO-247-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 650 V
- Id - Continuous Drain Current:
- 63.3 A
- Rds On - Drain-Source Resistance:
- 43 mOhms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:
- 3.5 V
- Qg - Gate Charge:
- 270 nC
- Minimum Operating Temperature:
- - 40 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 500 W
- Channel Mode:
- Enhancement
- Qualification:
- AEC-Q101
- Tradename:
- CoolMOS
- Packaging:
- Tube
- Brand:
- Infineon Technologies
- Configuration:
- Single
- Fall Time:
- 4 ns
- Height:
- 21.1 mm
- Length:
- 16.13 mm
- Product Type:
- MOSFET
- Rise Time:
- 10 ns
- Series:
- CoolMOS CFDA
- Factory Pack Quantity:
- 240
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Typical Turn-Off Delay Time:
- 85 ns
- Typical Turn-On Delay Time:
- 22 ns
- Width:
- 5.21 mm
- Part # Aliases:
- IPW65R048CFDA SP000895318
- Unit Weight:
- 0.211644 oz
