IRD3CH11DB6

DIODE GEN PURP 1.2KV 25A DIE

Manufacturer：: Infineon Technologies

Package：: Die

Packing：

Datasheet：: IRD3CH11DB6

Delivery services：

Payment method：

In stock：: 3280

Order quantity：

Specifications

Part Number: IRD3CH11DB6

Manufacturer: Infineon Technologies

Description: DIODE GEN PURP 1.2KV 25A DIE

Package: Die

Voltage - DC Reverse (Vr) (Max): 1200V

Current - Average Rectified (Io): 25A

Voltage - Forward (Vf) (Max) @ If: 2.7V @ 25A

Speed: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr): 190ns

Current - Reverse Leakage @ Vr: 700nA @ 1200V

Capacitance @ Vr, F: -

Mounting Type: Surface Mount

Package / Case: Die

Supplier Device Package: Die

Operating Temperature - Junction

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

Products Recommended

Part Number
Manufacturer
Description
Packaging
In Stock
Order quantity

SS5P6HM3J/86A
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 5A 60V TO-277A
2416

1N5331
Microsemi Corporation
DIODE GEN PURP 1.4KV 22A DO4
5152

MSS1P6HM3J/89A
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 1A 60V MICROSMP
7216

UH6PJHM3/87A
Vishay Semiconductor Diodes Division
DIODE 6A 600V TO-277A SMPC
7184

MSS2P2HM3/89A
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 2A 20V MICROSMP
5296