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IRF1405ZSTRRPBF original picture
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IRF1405ZSTRRPBF

MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC

Manufacturer:
Infineon / IR
Package:
TO-263-3
Packing:
Reel
Datasheet:
IRF1405ZSTRRPBF
Delivery services:
Payment method:
In stock:
3682
Order quantity:

Specifications

Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
150 A
Rds On - Drain-Source Resistance:
4.9 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
120 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
230 W
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Infineon / IR
Configuration:
Single
Fall Time:
82 ns
Forward Transconductance - Min:
88 S
Height:
4.4 mm
Length:
10 mm
Product Type:
MOSFET
Rise Time:
110 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
48 ns
Typical Turn-On Delay Time:
18 ns
Width:
9.25 mm
Part # Aliases:
SP001561404
Unit Weight:
0.139332 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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