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IRF3706STRLPBF original picture
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*Images are for reference only.

IRF3706STRLPBF

MOSFET 20V 1 N-CH HEXFET 8.5mOhms 23nC

Manufacturer:
Infineon Technologies
Package:
TO-263-3
Packing:
Reel
Datasheet:
IRF3706STRLPBF
Delivery services:
Payment method:
In stock:
2656
Order quantity:

Specifications

Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
77 A
Rds On - Drain-Source Resistance:
10.5 mOhms
Vgs - Gate-Source Voltage:
- 12 V, + 12 V
Qg - Gate Charge:
23 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
88 W
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Brand:
Infineon Technologies
Configuration:
Single
Fall Time:
4.8 ns
Height:
4.4 mm
Length:
10 mm
Product Type:
MOSFET
Rise Time:
87 ns
Factory Pack Quantity:
3200
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Type:
Smps MOSFET
Typical Turn-Off Delay Time:
17 ns
Typical Turn-On Delay Time:
6.8 ns
Width:
9.25 mm
Part # Aliases:
SP001561768
Unit Weight:
0.139332 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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