- Part Number
- IRF6662TR1PBF
- Manufacturer
- Infineon Technologies
- Description
- MOSFET N-CH 100V 8.3A DIRECTFET
- Package
- DirectFET? Isometric MZ
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 8.3A (Ta), 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 4.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs
- 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 1360pF @ 25V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs
- 22 mOhm @ 8.2A, 10V
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- DIRECTFET? MZ
- Package / Case
