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IRF830PBF-BE3 original picture
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IRF830PBF-BE3

MOSFET 500V N-CH HEXFET

Manufacturer:
Vishay / Siliconix
Package:
TO-220AB-3
Packing:
Tube
Datasheet:
IRF830PBF-BE3
Delivery services:
Payment method:
In stock:
2725
Order quantity:

Specifications

Manufacturer:
Vishay
Product Category:
MOSFET
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220AB-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
4.5 A
Rds On - Drain-Source Resistance:
1.5 Ohms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
38 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
74 W
Channel Mode:
Enhancement
Packaging:
Tube
Brand:
Vishay / Siliconix
Configuration:
Single
Fall Time:
16 ns
Product Type:
MOSFET
Rise Time:
16 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
42 ns
Typical Turn-On Delay Time:
8.2 ns
Part # Aliases:
IRF830PBF
Unit Weight:
0.068784 oz
Service Guarantees

Service Guarantees

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Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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