- Manufacturer:
- Infineon
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- SOIC-8
- Transistor Polarity:
- N-Channel, P-Channel
- Number of Channels:
- 2 Channel
- Vds - Drain-Source Breakdown Voltage:
- 30 V
- Id - Continuous Drain Current:
- 6.8 A, 4.6 A
- Rds On - Drain-Source Resistance:
- 22 mOhms, 51 mOhms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:
- 1.3 V
- Qg - Gate Charge:
- 6.8 nC, 8.1 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 2 W
- Channel Mode:
- Enhancement
- Tradename:
- HEXFET
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Packaging:
- MouseReel
- Brand:
- Infineon Technologies
- Configuration:
- Dual
- Fall Time:
- 3.9 ns, 15 ns
- Forward Transconductance - Min:
- 8.2 S, 4.1 S
- Height:
- 1.75 mm
- Length:
- 4.9 mm
- Product Type:
- MOSFET
- Rise Time:
- 4.8 ns, 14 ns
- Series:
- IRF939
- Factory Pack Quantity:
- 4000
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel, 1 P-Channel
- Typical Turn-Off Delay Time:
- 4.9 ns, 17 ns
- Typical Turn-On Delay Time:
- 5.1 ns, 8 ns
- Width:
- 3.9 mm
- Part # Aliases:
- IRF9389TRPBF SP001551666
- Unit Weight:
- 0.019048 oz
