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IRFH8330TRPBF original picture
IRFH8330TRPBF medium  picture
IRFH8330TRPBF thumbnail  picture
*Images are for reference only.

IRFH8330TRPBF

MOSFET 30V 1 N-CH HEXFET 6.6mOhms 9.3nC

Manufacturer:
Infineon / IR
Package:
PQFN-8
Packing:
Reel
Datasheet:
IRFH8330TRPBF
Delivery services:
Payment method:
In stock:
2312
Order quantity:

Specifications

Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PQFN-8
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
56 A
Rds On - Drain-Source Resistance:
9.9 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
2.35 V
Qg - Gate Charge:
9.3 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
35 W
Channel Mode:
Enhancement
Tradename:
StrongIRFET
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Infineon / IR
Configuration:
Single
Fall Time:
5.7 ns
Forward Transconductance - Min:
61 S
Height:
0.83 mm
Length:
6 mm
Product Type:
MOSFET
Rise Time:
15 ns
Series:
N-Channel
Factory Pack Quantity:
4000
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Typical Turn-Off Delay Time:
10 ns
Typical Turn-On Delay Time:
9.2 ns
Width:
5 mm
Part # Aliases:
IRFH8330TRPBF SP001566818
Unit Weight:
0.004308 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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