IRFIB6N60APBF

Manufacturer:

Vishay

Product Category:

MOSFET

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Transistor Polarity:

N-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

5.5 A

Rds On - Drain-Source Resistance:

750 mOhms

Vgs - Gate-Source Voltage:

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage:

2 V

Qg - Gate Charge:

49 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

60 W

Channel Mode:

Enhancement

Packaging:

Tube

Brand:

Vishay Semiconductors

Configuration:

Single

Height:

15.49 mm

Length:

10.41 mm

Product Type:

MOSFET

Series:

IRFIB

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Width:

4.7 mm

Unit Weight:

0.068784 oz