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IRFIBE30GPBF

MOSFET 800V N-CH HEXFET

Manufacturer:
Vishay Semiconductors
Package:
TO-220-3
Packing:
Tube
Datasheet:
IRFIBE30GPBF
Delivery services:
Payment method:
In stock:
2647
Order quantity:

Specifications

Manufacturer:
Vishay
Product Category:
MOSFET
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
2.1 A
Rds On - Drain-Source Resistance:
3 Ohms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
2 V
Qg - Gate Charge:
78 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
35 W
Channel Mode:
Enhancement
Packaging:
Tube
Brand:
Vishay Semiconductors
Configuration:
Single
Product Type:
MOSFET
Series:
IRFIBE
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Unit Weight:
0.068784 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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