- Manufacturer:
- Infineon
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- TO-252-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 100 V
- Id - Continuous Drain Current:
- 9.1 A
- Rds On - Drain-Source Resistance:
- 210 mOhms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Qg - Gate Charge:
- 16.7 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 175 C
- Pd - Power Dissipation:
- 39 W
- Channel Mode:
- Enhancement
- Packaging:
- Tube
- Brand:
- Infineon / IR
- Configuration:
- Single
- Fall Time:
- 23 ns
- Height:
- 2.3 mm
- Length:
- 6.5 mm
- Product Type:
- MOSFET
- Rise Time:
- 23 ns
- Factory Pack Quantity:
- 3000
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Type:
- HEXFET Power MOSFET
- Typical Turn-Off Delay Time:
- 32 ns
- Typical Turn-On Delay Time:
- 4.5 ns
- Width:
- 6.22 mm
- Part # Aliases:
- SP001567480
- Unit Weight:
- 0.011640 oz
