- Manufacturer:
- Vishay
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- TO-252-3
- Transistor Polarity:
- P-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 100 V
- Id - Continuous Drain Current:
- 5.6 A
- Rds On - Drain-Source Resistance:
- 600 mOhms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:
- 2 V
- Qg - Gate Charge:
- 18 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 42 W
- Channel Mode:
- Enhancement
- Packaging:
- Bulk
- Brand:
- Vishay Semiconductors
- Fall Time:
- 25 ns
- Forward Transconductance - Min:
- 1.5 S
- Product Type:
- MOSFET
- Rise Time:
- 29 ns
- Factory Pack Quantity:
- 3000
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 P-Channel
- Typical Turn-Off Delay Time:
- 21 ns
- Typical Turn-On Delay Time:
- 9.6 ns