IRG4BC10KDPBF

Manufacturer:

Infineon

Product Category:

IGBT Transistors

Technology:

Si

Package / Case:

TO-220-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

600 V

Collector-Emitter Saturation Voltage:

2.62 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

9 A

Pd - Power Dissipation:

38 W

Minimum Operating Temperature:

- 55 C

Packaging:

Tube

Brand:

Infineon Technologies

Height:

8.77 mm

Length:

10.54 mm

Product Type:

IGBT Transistors

Factory Pack Quantity:

1000

Subcategory:

IGBTs

Width:

4.69 mm

Part # Aliases:

SP001532484

Unit Weight:

0.211644 oz