IRL3302PBF

Manufacturer:

Infineon

Product Category:

MOSFET

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Transistor Polarity:

N-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

39 A

Rds On - Drain-Source Resistance:

23 mOhms

Vgs - Gate-Source Voltage:

- 10 V, + 10 V

Qg - Gate Charge:

20.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

57 W

Channel Mode:

Enhancement

Brand:

Infineon / IR

Configuration:

Single

Fall Time:

89 ns

Height:

15.65 mm

Length:

10 mm

Product Type:

MOSFET

Rise Time:

110 ns

Subcategory:

MOSFETs

Transistor Type:

1 N-Channel

Type:

Preliminary

Typical Turn-Off Delay Time:

41 ns

Typical Turn-On Delay Time:

7.2 ns

Width:

4.4 mm

Unit Weight:

0.068784 oz