- Manufacturer:
- Vishay
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- Through Hole
- Package / Case:
- DIP-4
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 60 V
- Id - Continuous Drain Current:
- 2.5 A
- Rds On - Drain-Source Resistance:
- 100 mOhms
- Vgs - Gate-Source Voltage:
- - 10 V, + 10 V
- Vgs th - Gate-Source Threshold Voltage:
- 1 V
- Qg - Gate Charge:
- 18 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 175 C
- Pd - Power Dissipation:
- 1.3 W
- Channel Mode:
- Enhancement
- Packaging:
- Tube
- Brand:
- Vishay / Siliconix
- Configuration:
- Single
- Fall Time:
- 41 ns
- Forward Transconductance - Min:
- 3.7 S
- Height:
- 3.37 mm
- Length:
- 6.29 mm
- Product Type:
- MOSFET
- Rise Time:
- 110 ns
- Factory Pack Quantity:
- 2500
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Typical Turn-Off Delay Time:
- 23 ns
- Typical Turn-On Delay Time:
- 11 ns
- Width:
- 5 mm
- Unit Weight:
- 0.031537 oz
