- Manufacturer:
- Infineon
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- SOT-223-4
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 55 V
- Id - Continuous Drain Current:
- 4.4 A
- Rds On - Drain-Source Resistance:
- 100 mOhms
- Vgs - Gate-Source Voltage:
- - 16 V, + 16 V
- Qg - Gate Charge:
- 10.4 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 2.1 W
- Channel Mode:
- Enhancement
- Packaging:
- Tube
- Brand:
- Infineon Technologies
- Configuration:
- Single
- Fall Time:
- 25 ns
- Height:
- 1.6 mm
- Length:
- 6.5 mm
- Product Type:
- MOSFET
- Rise Time:
- 21 ns
- Factory Pack Quantity:
- 1760
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Type:
- HEXFET Power MOSFET
- Typical Turn-Off Delay Time:
- 18 ns
- Typical Turn-On Delay Time:
- 7.4 ns
- Width:
- 3.5 mm
- Part # Aliases:
- SP001550452
- Unit Weight:
- 0.003951 oz
