IXDH20N120D1

Manufacturer:

IXYS

Product Category:

IGBT Transistors

Technology:

Si

Package / Case:

TO-247-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

1.2 kV

Collector-Emitter Saturation Voltage:

2.4 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

38 A

Pd - Power Dissipation:

200 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

IXDH20N120

Packaging:

Tube

Brand:

IXYS

Continuous Collector Current:

38 A

Continuous Collector Current Ic Max:

50 A

Gate-Emitter Leakage Current:

500 nA

Height:

21.46 mm

Length:

16.26 mm

Operating Temperature Range:

- 55 C to + 150 C

Product Type:

IGBT Transistors

Factory Pack Quantity:

30

Subcategory:

IGBTs

Width:

5.3 mm

Unit Weight:

0.229281 oz