- Manufacturer:
- IXYS
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- TO-263-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 1 kV
- Id - Continuous Drain Current:
- 4 A
- Rds On - Drain-Source Resistance:
- 3.3 Ohms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:
- 6 V
- Qg - Gate Charge:
- 26 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 150 W
- Channel Mode:
- Enhancement
- Tradename:
- HiPerFET
- Packaging:
- Tube
- Brand:
- IXYS
- Configuration:
- Single
- Fall Time:
- 50 ns
- Forward Transconductance - Min:
- 1.8 S
- Height:
- 4.83 mm
- Length:
- 9.65 mm
- Product Type:
- MOSFET
- Rise Time:
- 36 ns
- Series:
- IXFA4N100
- Factory Pack Quantity:
- 50
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Type:
- Polar HiPerFET Power MOSFET
- Typical Turn-Off Delay Time:
- 37 ns
- Typical Turn-On Delay Time:
- 24 ns
- Width:
- 10.41 mm
- Unit Weight:
- 0.056438 oz
