IXFH36N60P

Manufacturer:

IXYS

Product Category:

MOSFET

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Transistor Polarity:

N-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

36 A

Rds On - Drain-Source Resistance:

190 mOhms

Vgs - Gate-Source Voltage:

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage:

3 V

Qg - Gate Charge:

102 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

650 W

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Brand:

IXYS

Configuration:

Single

Fall Time:

22 ns

Forward Transconductance - Min:

39 S

Height:

21.46 mm

Length:

16.26 mm

Product Type:

MOSFET

Rise Time:

25 ns

Series:

IXFH36N60

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Transistor Type:

1 N-Channel

Typical Turn-Off Delay Time:

80 ns

Typical Turn-On Delay Time:

30 ns

Width:

5.3 mm

Unit Weight:

0.211644 oz