- Manufacturer:
- IXYS
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- Through Hole
- Package / Case:
- TO-247-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 300 V
- Id - Continuous Drain Current:
- 86 A
- Rds On - Drain-Source Resistance:
- 43 mOhms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:
- 5 V
- Qg - Gate Charge:
- 180 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 830 W
- Channel Mode:
- Enhancement
- Tradename:
- HiPerFET
- Packaging:
- Tube
- Brand:
- IXYS
- Configuration:
- Single
- Fall Time:
- 15 ns
- Forward Transconductance - Min:
- 70 S
- Height:
- 21.46 mm
- Length:
- 16.26 mm
- Product Type:
- MOSFET
- Rise Time:
- 18 ns
- Series:
- IXFH86N30
- Factory Pack Quantity:
- 30
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Type:
- Trench HiperFET Power MOSFET
- Typical Turn-Off Delay Time:
- 54 ns
- Typical Turn-On Delay Time:
- 16 ns
- Width:
- 5.3 mm
- Unit Weight:
- 0.211644 oz
