- Part Number
- IXTP1N100
- Manufacturer
- IXYS
- Description
- MOSFET N-CH 1000V 1.5A TO-220AB
- Package
- TO-220-3
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 1000V
- Current - Continuous Drain (Id) @ 25°C
- 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs
- 14.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 400pF @ 25V
- Vgs (Max)
- ±30V
- FET Feature
- -
- Power Dissipation (Max)
- 54W (Tc)
- Rds On (Max) @ Id, Vgs
- 11 Ohm @ 1A, 10V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220AB
- Package / Case
