IXTQ52N30P

Manufacturer:

IXYS

Product Category:

MOSFET

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3P-3

Transistor Polarity:

N-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

300 V

Id - Continuous Drain Current:

52 A

Rds On - Drain-Source Resistance:

66 mOhms

Vgs - Gate-Source Voltage:

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Qg - Gate Charge:

110 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

400 W

Channel Mode:

Enhancement

Packaging:

Tube

Brand:

IXYS

Configuration:

Single

Fall Time:

20 ns

Height:

20.3 mm

Length:

15.8 mm

Product Type:

MOSFET

Rise Time:

22 ns

Series:

IXTQ52N30

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Transistor Type:

1 N-Channel

Typical Turn-Off Delay Time:

60 ns

Typical Turn-On Delay Time:

24 ns

Width:

4.9 mm

Unit Weight:

0.194007 oz