Wed, Jun29,14:37:12 GMT+8
English
USD

English

Chinese

Japanese

Korean

Russian

IC
IC
*Images are for reference only.

JAN1N6627US

DIODE GEN PURP 440V 1.75A D5B

Manufacturer:
Microsemi Corporation
Package:
SQ-MELF, E
Packing:
Datasheet:
JAN1N6627US
Delivery services:
Payment method:
In stock:
2768
Order quantity:

Specifications

Part Number
JAN1N6627US
Manufacturer
Microsemi Corporation
Description
DIODE GEN PURP 440V 1.75A D5B
Package
SQ-MELF, E
Voltage - DC Reverse (Vr) (Max)
440V
Current - Average Rectified (Io)
1.75A
Voltage - Forward (Vf) (Max) @ If
1.35V @ 1.2A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30ns
Current - Reverse Leakage @ Vr
2µA @ 440V
Capacitance @ Vr, F
40pF @ 10V, 1MHz
Mounting Type
Surface Mount
Package / Case
SQ-MELF, E
Supplier Device Package
D-5B
Operating Temperature - Junction
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

Products Recommended

  • Part Number
  • Manufacturer
  • Description
  • Packaging
  • In Stock
  • Order quantity
  • Vishay Semiconductor Diodes Division
  • DIODE GEN PURP 100V 1A DO220AA
  • 7984
  •  
  • Vishay Semiconductor Diodes Division
  • DIODE GEN PURP 800V 1A DO220AA
  • 4720
  •  
  • Vishay Semiconductor Diodes Division
  • DIODE GEN PURP 100V 4A TO277A
  • 54000
  •  
  • Vishay Semiconductor Diodes Division
  • DIODE GEN PURP 400V 1A DO220AA
  • 4192
  •  
  • Vishay Semiconductor Diodes Division
  • DIODE GEN PURP 600V 1A DO220AA
  • 5552
  •  
The cookie settings on this website are set to 'allow all cookies' to give you the very best experience. Please click Accept Cookies to continue to use the site.