Jan2N2369A

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

Mounting Style:

Through Hole

Package / Case:

TO-18-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

15 V

Collector- Base Voltage VCBO:

40 V

Emitter- Base Voltage VEBO:

4.5 V

Collector-Emitter Saturation Voltage:

200 mV

Maximum DC Collector Current:

100 mA

Pd - Power Dissipation:

360 mW

Gain Bandwidth Product fT:

-

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

Packaging:

Bulk

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

40 at 10 mA, 350 VDC

DC Current Gain hFE Max:

120 at 10 mA, 350 VDC

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Technology:

Si

Unit Weight:

0.068711 oz