KSC2688YSTU

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

300 V

Collector- Base Voltage VCBO:

300 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

200 mA

Pd - Power Dissipation:

1.25 W

Gain Bandwidth Product fT:

80 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Brand:

Diodes Incorporated

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si