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MJD122-1 original picture
MJD122-1 medium  picture
MJD122-1 thumbnail  picture
*Images are for reference only.

MJD122-1

Darlington Transistors NPN PWR Darlington Int Anti Collector Complete Your Design

Manufacturer:
STMicroelectronics
Package:
TO-251-3
Packing:
Tube
Datasheet:
MJD122-1
Delivery services:
Payment method:
In stock:
3006
Order quantity:

Specifications

Manufacturer:
STMicroelectronics
Product Category:
Darlington Transistors
Configuration:
Single
Transistor Polarity:
NPN
Collector- Emitter Voltage VCEO Max:
100 V
Emitter- Base Voltage VEBO:
5 V
Collector- Base Voltage VCBO:
100 V
Maximum DC Collector Current:
5 A
Maximum Collector Cut-off Current:
10 uA
Pd - Power Dissipation:
20 W
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Maximum Operating Temperature:
+ 150 C
Series:
MJD122
Packaging:
Tube
Brand:
STMicroelectronics
DC Collector/Base Gain hfe Min:
100
DC Current Gain hFE Max:
12000
Height:
7.2 mm
Length:
6.6 mm
Product Type:
Darlington Transistors
Factory Pack Quantity:
75
Subcategory:
Transistors
Width:
2.4 mm
Unit Weight:
0.011993 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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