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MJD44H11T4G

Bipolar Transistors - BJT 8A 80V 20W NPN

Manufacturer:
onsemi
Package:
TO-252-3
Packing:
Reel
Datasheet:
MJD44H11T4G
Delivery services:
Payment method:
In stock:
1891
Order quantity:

Specifications

Manufacturer:
onsemi
Product Category:
Bipolar Transistors - BJT
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
80 V
Collector- Base Voltage VCBO:
-
Emitter- Base Voltage VEBO:
5 V
Collector-Emitter Saturation Voltage:
1 V
Maximum DC Collector Current:
8 A
Pd - Power Dissipation:
20 W
Gain Bandwidth Product fT:
85 MHz
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
MJD44H11
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
-
Brand:
onsemi
Continuous Collector Current:
8 A
DC Collector/Base Gain hfe Min:
60
Height:
2.38 mm
Length:
6.73 mm
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
2500
Subcategory:
Transistors
Technology:
Si
Width:
6.22 mm
Unit Weight:
0.015873 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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