MJE5730G

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

300 V

Collector- Base Voltage VCBO:

300 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

1 A

Pd - Power Dissipation:

40 W

Gain Bandwidth Product fT:

10 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Brand:

Diodes Incorporated

DC Collector/Base Gain hfe Min:

30 at 300 mA, 10 V

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si