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MMBT5550LT1G

Bipolar Transistors - BJT SS HV XSTR NPN 160V

Manufacturer:
onsemi
Package:
SOT-23-3
Packing:
Reel
Datasheet:
MMBT5550LT1G
Delivery services:
Payment method:
In stock:
2034
Order quantity:

Specifications

Manufacturer:
onsemi
Product Category:
Bipolar Transistors - BJT
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
140 V
Collector- Base Voltage VCBO:
160 V
Emitter- Base Voltage VEBO:
6 V
Collector-Emitter Saturation Voltage:
250 mV
Maximum DC Collector Current:
600 mA
Pd - Power Dissipation:
225 mW
Gain Bandwidth Product fT:
-
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
MMBT5550L
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
onsemi
Continuous Collector Current:
600 mA
DC Collector/Base Gain hfe Min:
60
Height:
0.94 mm
Length:
2.9 mm
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
30000
Subcategory:
Transistors
Technology:
Si
Width:
1.3 mm
Unit Weight:
0.000282 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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