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MMBT5551

Bipolar Transistors - BJT

Manufacturer:
Diodes Incorporated
Package:
SOT-23-3
Packing:
Reel
Datasheet:
MMBT5551
Delivery services:
Payment method:
In stock:
2867
Order quantity:

Specifications

Manufacturer:
Diodes Incorporated
Product Category:
Bipolar Transistors - BJT
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
160 V
Collector- Base Voltage VCBO:
180 V
Emitter- Base Voltage VEBO:
6 V
Maximum DC Collector Current:
600 mA
Pd - Power Dissipation:
300 mW
Gain Bandwidth Product fT:
300 MHz
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
MMBT5551
Packaging:
Reel
Brand:
Diodes Incorporated
Continuous Collector Current:
0.6 A
DC Collector/Base Gain hfe Min:
80 at 1 mA, 5 V, 80 at 10 mA, 5 V, 30 at 50 mA, 5 V
Height:
1 mm
Length:
3.05 mm
Product Type:
BJTs - Bipolar Transistors
Subcategory:
Transistors
Technology:
Si
Width:
1.4 mm
Unit Weight:
0.000282 oz

Description


Diodes Incorporated  MMBT5551

SMD General Purpose NPN Transistors



Ordering Information

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We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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