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MMBT5551LT1G

Bipolar Transistors - BJT 600mA 160V NPN

Manufacturer:
onsemi
Package:
SOT-23-3
Packing:
Reel
Datasheet:
MMBT5551LT1G
Delivery services:
Payment method:
In stock:
1834
Order quantity:

Specifications

Manufacturer:
onsemi
Product Category:
Bipolar Transistors - BJT
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
160 V
Collector- Base Voltage VCBO:
180 V
Emitter- Base Voltage VEBO:
6 V
Collector-Emitter Saturation Voltage:
200 mV
Maximum DC Collector Current:
600 mA
Pd - Power Dissipation:
225 mW
Gain Bandwidth Product fT:
-
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
MMBT5551L
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
onsemi
Continuous Collector Current:
0.6 A
DC Collector/Base Gain hfe Min:
80
DC Current Gain hFE Max:
250
Height:
0.94 mm
Length:
2.9 mm
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
30000
Subcategory:
Transistors
Technology:
Si
Width:
1.3 mm
Unit Weight:
0.000282 oz

Description


onsemi MMBT5551LT1G

High Voltage Transistors



Features
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant



Ordering Information

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We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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