- Manufacturer:
- Diodes Incorporated
- Product Category:
- Bipolar Transistors - BJT
- Mounting Style:
- SMD/SMT
- Package / Case:
- SOT-363-6
- Transistor Polarity:
- NPN, PNP
- Configuration:
- Dual
- Collector- Emitter Voltage VCEO Max:
- 160 V
- Collector- Base Voltage VCBO:
- 180 V
- Emitter- Base Voltage VEBO:
- 6 V
- Maximum DC Collector Current:
- 200 mA
- Pd - Power Dissipation:
- 200 mW
- Gain Bandwidth Product fT:
- 300 MHz
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Series:
- MMDT5451
- Brand:
- Diodes Incorporated
- Continuous Collector Current:
- 0.2 A
- DC Collector/Base Gain hfe Min:
- 80 at 1 mA, 5 V at NPN, 80 at 10 mA, 5 V at NPN, 30 at 50 mA, 5 V at NPN, 50 at 1 mA, 5 V at PNP, 60 at 10 mA, 5 V at PNP, 50 at 50 mA, 5 V at PNP
- Height:
- 1 mm
- Length:
- 2.2 mm
- Product Type:
- BJTs - Bipolar Transistors
- Subcategory:
- Transistors
- Technology:
- Si
- Width:
- 1.35 mm
- Unit Weight:
- 0.000265 oz
