MMDT5551-7

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Transistor Polarity:

NPN

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

160 V

Collector- Base Voltage VCBO:

180 V

Emitter- Base Voltage VEBO:

6 V

Maximum DC Collector Current:

200 mA

Pd - Power Dissipation:

200 mW

Gain Bandwidth Product fT:

300 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

MMDT5551

Packaging:

Reel

Packaging:

Cut Tape

Brand:

Diodes Incorporated

Continuous Collector Current:

0.2 A

DC Collector/Base Gain hfe Min:

80

DC Current Gain hFE Max:

250

Height:

1 mm

Length:

2.2 mm

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Technology:

Si

Width:

1.35 mm

Unit Weight:

0.000212 oz