- Manufacturer:
- NXP
- Product Category:
- RF MOSFET Transistors
- Transistor Polarity:
- N-Channel
- Technology:
- Si
- Id - Continuous Drain Current:
- 700 mA
- Vds - Drain-Source Breakdown Voltage:
- 68 V
- Operating Frequency:
- 0.86 GHz to 0.96 GHz
- Gain:
- 17.5 dB
- Output Power:
- 100 W
- Minimum Operating Temperature:
- - 65 C
- Maximum Operating Temperature:
- + 150 C
- Mounting Style:
- SMD/SMT
- Package / Case:
- TO-270-4
- Packaging:
- Reel
- Brand:
- NXP Semiconductors
- Channel Mode:
- Enhancement
- Configuration:
- Single
- Height:
- 2.64 mm
- Length:
- 17.58 mm
- Pd - Power Dissipation:
- 427 W
- Product Type:
- RF MOSFET Transistors
- Subcategory:
- MOSFETs
- Type:
- RF Power MOSFET
- Vgs - Gate-Source Voltage:
- - 0.5 V, 15 V
- Vgs th - Gate-Source Threshold Voltage:
- 3.5 V
- Width:
- 9.07 mm
- Unit Weight:
- 0.058073 oz
