- Manufacturer:
- NXP
- Product Category:
- RF MOSFET Transistors
- Transistor Polarity:
- N-Channel
- Technology:
- Si
- Vds - Drain-Source Breakdown Voltage:
- 65 V
- Operating Frequency:
- 1 GHz
- Gain:
- 19 dB
- Output Power:
- 45 W
- Maximum Operating Temperature:
- + 150 C
- Mounting Style:
- SMD/SMT
- Package / Case:
- TO-272-3
- Packaging:
- Reel
- Brand:
- NXP Semiconductors
- Channel Mode:
- Enhancement
- Configuration:
- Single
- Height:
- 2.64 mm
- Length:
- 23.67 mm
- Pd - Power Dissipation:
- 177 W
- Product Type:
- RF MOSFET Transistors
- Subcategory:
- MOSFETs
- Type:
- RF Power MOSFET
- Vgs - Gate-Source Voltage:
- - 0.5 V, 15 V
- Vgs th - Gate-Source Threshold Voltage:
- 2.8 V
- Width:
- 6.4 mm
