- Manufacturer:
- Toshiba
- Product Category:
- Bipolar Transistors - BJT
- Transistor Polarity:
- NPN
- Configuration:
- Single
- Collector- Emitter Voltage VCEO Max:
- 50 V
- Collector- Base Voltage VCBO:
- 60 V
- Emitter- Base Voltage VEBO:
- 7 V
- Maximum DC Collector Current:
- 500 mA
- Pd - Power Dissipation:
- 200 mW
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Series:
- MSD602-RT1
- Brand:
- Toshiba
- DC Collector/Base Gain hfe Min:
- 120
- Product Type:
- BJTs - Bipolar Transistors
- Subcategory:
- Transistors
- Technology:
- Si
