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NE3514S02-T1D-A original picture
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NE3514S02-T1D-A

RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET

Manufacturer:
CEL
Package:
S0-2
Packing:
Reel
Datasheet:
NE3514S02-T1D-A
Delivery services:
Payment method:
In stock:
2930
Order quantity:

Specifications

Manufacturer:
CEL
Product Category:
RF JFET Transistors
Transistor Type:
pHEMT
Technology:
GaAs
Operating Frequency:
20 GHz
Gain:
10 dB
Vds - Drain-Source Breakdown Voltage:
4 V
Vgs - Gate-Source Breakdown Voltage:
- 3 V
Id - Continuous Drain Current:
70 mA
Maximum Operating Temperature:
+ 125 C
Pd - Power Dissipation:
165 mW
Mounting Style:
SMD/SMT
Package / Case:
S0-2
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
CEL
Forward Transconductance - Min:
55 mS
NF - Noise Figure:
0.75 dB
Product:
RF JFET
Product Type:
RF JFET Transistors
Factory Pack Quantity:
10000
Subcategory:
Transistors
Type:
GaAs pHEMT
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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