- Manufacturer:
- CEL
- Product Category:
- RF JFET Transistors
- Transistor Type:
- pHEMT
- Technology:
- GaAs
- Operating Frequency:
- 12 GHz
- Gain:
- 12.5 dB
- Vds - Drain-Source Breakdown Voltage:
- 4 V
- Vgs - Gate-Source Breakdown Voltage:
- - 3 V
- Id - Continuous Drain Current:
- 88 mA
- Maximum Operating Temperature:
- + 125 C
- Pd - Power Dissipation:
- 165 mW
- Mounting Style:
- SMD/SMT
- Package / Case:
- S0-2
- Packaging:
- Reel
- Brand:
- CEL
- Forward Transconductance - Min:
- 70 mS
- NF - Noise Figure:
- 0.3 dB
- P1dB - Compression Point:
- 14 dBm
- Product:
- RF JFET
- Product Type:
- RF JFET Transistors
- Factory Pack Quantity:
- 2000
- Subcategory:
- Transistors
- Type:
- GaAs pHEMT
