- Manufacturer:
- onsemi
- Product Category:
- IGBT Transistors
- Technology:
- Si
- Package / Case:
- TO-247
- Mounting Style:
- Through Hole
- Configuration:
- Single
- Collector- Emitter Voltage VCEO Max:
- 1350 V
- Collector-Emitter Saturation Voltage:
- 2.2 V
- Maximum Gate Emitter Voltage:
- 25 V
- Continuous Collector Current at 25 C:
- 40 A
- Pd - Power Dissipation:
- 394 W
- Minimum Operating Temperature:
- - 40 C
- Maximum Operating Temperature:
- + 175 C
- Series:
- NGTB20N135IHR
- Packaging:
- Tube
- Brand:
- onsemi
- Gate-Emitter Leakage Current:
- 100 nA
- Product Type:
- IGBT Transistors
- Factory Pack Quantity:
- 30
- Subcategory:
- IGBTs
- Unit Weight:
- 0.229281 oz
