- Manufacturer:
- onsemi
- Product Category:
- Bipolar Transistors - BJT
- Mounting Style:
- Through Hole
- Transistor Polarity:
- NPN
- Configuration:
- Single
- Collector- Emitter Voltage VCEO Max:
- 350 V
- Collector- Base Voltage VCBO:
- 350 V
- Emitter- Base Voltage VEBO:
- 5 V
- Maximum DC Collector Current:
- 15 A
- Pd - Power Dissipation:
- 230 W
- Gain Bandwidth Product fT:
- 35 MHz
- Minimum Operating Temperature:
- - 65 C
- Maximum Operating Temperature:
- + 150 C
- Brand:
- onsemi
- DC Collector/Base Gain hfe Min:
- 80
- Height:
- 25.98 mm
- Length:
- 19.89 mm
- Product Type:
- BJTs - Bipolar Transistors
- Factory Pack Quantity:
- 25
- Subcategory:
- Transistors
- Technology:
- Si
- Width:
- 4.89 mm
- Unit Weight:
- 0.352740 oz