NTB45N06LT4G

Manufacturer:

onsemi

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Transistor Polarity:

N-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

45 A

Rds On - Drain-Source Resistance:

28 mOhms

Vgs - Gate-Source Voltage:

- 5 V, + 5 V

Vgs th - Gate-Source Threshold Voltage:

1 V

Qg - Gate Charge:

23 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

125 W

Channel Mode:

Enhancement

Packaging:

Reel

Packaging:

Cut Tape

Brand:

onsemi

Configuration:

Single

Fall Time:

158 ns

Forward Transconductance - Min:

22.8 S

Height:

4.83 mm

Length:

10.29 mm

Product Type:

MOSFET

Rise Time:

341 ns

Series:

NTB45N06L

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Transistor Type:

1 N-Channel

Type:

MOSFET

Typical Turn-Off Delay Time:

36 ns

Typical Turn-On Delay Time:

13 ns

Width:

9.65 mm

Unit Weight:

0.139332 oz