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NTBG025N065SC1 original picture
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*Images are for reference only.

NTBG025N065SC1

MOSFET Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L

Manufacturer:
onsemi
Package:
D2PAK-7L
Packing:
Reel
Datasheet:
NTBG025N065SC1
Delivery services:
Payment method:
In stock:
3594
Order quantity:

Specifications

Manufacturer:
onsemi
Product Category:
MOSFET
Technology:
SiC
Mounting Style:
SMD/SMT
Package / Case:
D2PAK-7L
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
106 A
Rds On - Drain-Source Resistance:
28.5 mOhms
Vgs - Gate-Source Voltage:
- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:
4.3 V
Qg - Gate Charge:
164 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
395 W
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Brand:
onsemi
Fall Time:
8 ns
Forward Transconductance - Min:
27 S
Product Type:
MOSFET
Rise Time:
19 ns
Series:
NTBG025N065SC1
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
32 ns
Typical Turn-On Delay Time:
17 ns
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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