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NTMFS6H824NT1G

Manufacturer:
onsemi
Package:
8-PowerTDFN, 5 Leads
Packing:
Reel
Datasheet:
NTMFS6H824NT1G
Delivery services:
Payment method:
In stock:
12530
Order quantity:

Specifications

Mfr. #
NTMFS6H824NT1G
Manufacturer
onsemi
Package
Tape&Reel
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2470 pF @ 40 V
Power Dissipation (Max)
3.8W (Ta), 115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Supplier Device Package
5-DFN (5x6) (8-SOFL)

Description

NTMFS6H824NT1G is a high-performance power MOSFET produced by ON Semiconductor. It features a low on-state resistance, fast switching speed, and excellent thermal performance. It is an ideal choice for high-efficiency power conversion and management in a variety of applications, such as DC-DC converters, power supplies, and motor drives.


Here are some of the key features of NTMFS6H824NT1G:

  1. Low on-state resistance: This MOSFET has a low on-state resistance of 1.7mΩ, which reduces power loss and improves efficiency.
  2. Fast switching speed: NTMFS6H824NT1G has a fast switching speed of 13ns, which ensures high-speed switching and reduces switching loss.
  3. Excellent thermal performance: This MOSFET has a low thermal resistance of 0.76°C/W, which ensures efficient heat dissipation and reliable operation under high-temperature conditions.
  4. Advanced packaging: NTMFS6H824NT1G is available in a compact and robust Power33 package, which enhances thermal performance and enables high-density power designs.
  5. Wide voltage and current range: This MOSFET can handle a wide voltage range of up to 30V and a current of up to 89A, making it suitable for a wide range of applications.


Here are the package and specifications of NTMFS6H824NT1G:

Package: Power33

Specifications:

  • Drain-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 89A
  • On-state Resistance (Rds): 1.7mΩ
  • Gate-Source Voltage (Vgs): ±20V
  • Total Gate Charge (Qg): 60nC
  • Threshold Voltage (Vth): 2.4V
  • Operating Temperature Range: -55°C to 175°C



In summary, NTMFS6H824NT1G is a high-performance power MOSFET that provides low on-state resistance, fast switching speed, and excellent thermal performance. It is an ideal choice for high-efficiency power conversion and management in a variety of applications. The compact and robust Power33 package and wide voltage and current range make it easy to design and integrate into various circuits.

Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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