- Mfr. #
- NVHL080N120SC1A
- Manufacturer
- onsemi
- Package
- Tube
- FET Type
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 1200 V
- Current - Continuous Drain (Id) @ 25°C
- 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Rds On (Max) @ Id, Vgs
- 110mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id
- 4.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs
- 56 nC @ 20 V
- Vgs (Max)
- +25, -15V
- Input Capacitance (Ciss) (Max) @ Vds
- 1670 pF @ 800 V
- Power Dissipation (Max)
- 178W (Tc)
- Operating Temperature
- -55°C ~ 175°C
- Package / Case
- TO-247-3
- Supplier Device Package
- TO-247-3
